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IXXN110N65B4H1 IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT IGBT Modules IXXN110

HYST Integrated Circuit 650V 215A 750W SOT227B Transistors IGBT Modules IXXN110 IXXN110N65B4H1

IXXN110N65B4H1
minimum order
1 piece
Quantity:
$16.00 - $20.00 / piece
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  • Operating Temperature:Standard
  • Series:Standard
  • Description:IGBT Transistors 650V/240A
  • Model Number:IXXN110N65B4H1
  • Type:Bipolar Transistor
  • Place of Origin:Original
  • Brand Name:Original
  • D/C:Standard
  • Package Type:Standard
  • Application:Standard
  • Supplier Type:original manufacturer, agency, retailer
  • Cross Reference:-
  • Media Available:datasheet, Photo
  • Current - Collector (Ic) (Max):Standard
  • Voltage - Collector Emitter Breakdown (max):Standard
  • Vce Saturation (Max) @ Ib, Ic:Standard
  • Current - Collector Cutoff (Max):Standard
  • DC Current Gain (hFE) (Min) @ Ic, Vce:Standard
  • Power - Max:Standard
  • Frequency - Transition:Standard
  • Mounting Type:Standard, Standard
  • Package / Case:Standard
  • Resistor - Base (R1):Standard
  • Resistor - Emitter Base (R2):Standard
  • FET Type:Standard
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):Standard
  • Current - Continuous Drain (Id) @ 25°C:Standard
  • Rds On (Max) @ Id, Vgs:Standard
  • Vgs(th) (Max) @ Id:Standard
  • Gate Charge (Qg) (Max) @ Vgs:Standard
  • Input Capacitance (Ciss) (Max) @ Vds:Standard
  • Frequency:Standard
  • Current Rating (Amps):Standard
  • Noise Figure:Standard
  • Power - Output:Standard
  • Voltage - Rated:Standard
  • Drive Voltage (Max Rds On, Min Rds On):Standard
  • Vgs (Max):Standard
  • IGBT Type:Standard
  • Configuration:Standard
  • Vce(on) (Max) @ Vge, Ic:Standard
  • Input Capacitance (Cies) @ Vce:Standard
  • Input:Standard
  • NTC Thermistor:Standard
  • Voltage - Breakdown (V(BR)GSS):Standard
  • Current - Drain (Idss) @ Vds (Vgs=0):Standard
  • Current Drain (Id) - Max:Standard
  • Voltage - Cutoff (VGS off) @ Id:Standard
  • Resistance - RDS(On):Standard
  • Voltage - Output:Standard
  • Voltage - Offset (Vt):Standard
  • Current - Gate to Anode Leakage (Igao):Standard
  • Current - Valley (Iv):Standard
  • Current - Peak:Standard
  • Transistor Type:Standard
  • Product::IGBT Transistors
  • Package / Case::SOT-227
  • Mounting Style::Screw Mount
  • Configuration::Copack (Sonic-FRD)
  • Collector- Emitter Voltage VCEO Max::650 V
  • Collector-Emitter Saturation Voltage::2.1 V
  • Continuous Collector Current at 25 C::230 A
  • Pd - Power Dissipation::750 W
  • Continuous Collector Current Ic Max::110 A
  • Gate-Emitter Leakage Current::100 nA

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